IRF9540N IC

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SKU HS664

The IRF9450N IC is a International Rectifier based on HEXFETs P-Channel Power MOSFET Transistor Module. It utilizes advanced processing techniques to achieve extremely low on resistance per silicon area. It has various features such as: - Advanced process technology, Dynamic dv/dt rating, fast switching, fully avalanch...

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The IRF9450N IC is a International Rectifier based on HEXFETs P-Channel Power MOSFET Transistor Module. It utilizes advanced processing techniques to achieve extremely low on resistance per silicon area. It has various features such as: - Advanced process technology, Dynamic dv/dt rating, fast switching, fully avalanche rated and many more. It provides designer with an extremely efficient and reliable device for use in a wide variety of applications like: - Amplifier, switching, automobile, lighting and so on.

Specifications

23
Name
IRF9450 N IC
Package
TO-220 AB
Category
Power MOSFET
Configuration
Single
Maximum Power Dissipation
140000 mW
Number of Elements per Chip
1
Maximum Continuous Drain Current
23 A
Maximum Drain Source Resistance
0.117 Ohm@10 V
Maximum Drain Source Voltage
100 V
Maximum Gate Source Voltage
±20 V
Typical Fall Time
51 ns
Typical Gate Charge @ Vgs
97 nC(Max)@10 V
Typical Input Capacitance @ Vds
1300 pF@25 V
Typical Rise Time
67 ns
Typical Turn-Off Delay Time
51 ns
Typical Turn-On Delay Time
15 ns
Operating Temperature Range
-55°C to 175°C
Channel Type
P
Mounting Type
Through Hole
Number of Pins
3
Width
4.69mm (Max)
Height
8.77mm (Max)
Length
10.54mm (Max)

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